Product Summary

The SI4425BDYT1E3 is a P-Channel 30-V (D-S) MOSFET.

Parametrics

SI4425BDYT1E3 absolute maximum ratings: (1)Drain-Source Voltage: -30 V; (2)Gate-Source Voltage: ±20 V; (3)Continuous Drain Current (TJ = 150℃): -11.4 A at TA = 25℃, -9.1 A at TA = 70℃; (4)Pulsed Drain Current: -50 A; (5)continuous Source Current (Diode Conduction): -2.1 A; (6)Maximum Power Dissipation: 2.5 W at TA = 25℃, 1.6 W at TA = 70℃; (7)Operating Junction and Storage Temperature Range: -55 to 150 ℃.

Features

SI4425BDYT1E3 features: (1)TrenchFET Power MOSFET; (2)Advanced High Cell Density Process.

Diagrams

Si4401BDY
Si4401BDY
Other

Data Sheet
Negotiable 
SI4401BDY-T1-E3
SI4401BDY-T1-E3
Vishay/Siliconix
MOSFET 40V 10.5A 0.014Ohm
Data Sheet
0-1: $1.06
1-25: $0.84
25-50: $0.79
50-100: $0.76
SI4403BDY-T1-E3
SI4403BDY-T1-E3
Vishay/Siliconix
MOSFET 20V 9A 2.5W
Data Sheet
0-1: $0.60
1-25: $0.46
25-50: $0.43
50-100: $0.41
SI4410BDY-T1-E3
SI4410BDY-T1-E3
Vishay/Siliconix
MOSFET 30V 10A 2.5W
Data Sheet
0-1: $0.46
1-25: $0.43
25-50: $0.41
50-100: $0.39
SI4406DY-T1-GE3
SI4406DY-T1-GE3
Vishay/Siliconix
MOSFET 30V 20A 3.5W 4.5mohm @ 10V
Data Sheet
0-810: $2.23
810-2500: $1.58
SI4408DY-T1-GE3
SI4408DY-T1-GE3
Vishay/Siliconix
MOSFET 20V 21A 3.5W 4.5mohm @ 10V
Data Sheet
0-1510: $0.95
1510-2500: $0.70